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Low Noise amplifier for 8,4 GHz
Svoboda, Libor ; Vágner, Petr (referee) ; Kasal, Miroslav (advisor)
This project deals with methods of design and realization of low noise microwave amplifier for X-band. The first part describes this issue at a theoretical level. Thus it contains a detailed analysis of microstrip line and its circuit components. It is followed by some specifics of microstrip filters and with mention of microwave heterojunction transistors. The last chapter of the theoretical part describes design of small-signal amplifier with focus on low noise figure. The second part, practical, shows a concrete procedure of two-stage LNA design with HEMTs, using CAD tool Ansoft Designer. This section, as well as the bachelor’s thesis, is finished with realization of amplifier and analysis of its properties.
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General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design
Hulicius, Eduard ; Hájek, František ; Hospodková, Alice ; Hubík, Pavel ; Gedeonová, Zuzana ; Hubáček, Tomáš ; Pangrác, Jiří ; Kuldová, Karla
GaN-based nanostructures are used for many present semiconductor devices. The main topics are structures for blue LEDs and LDs, but there are also other interesting and important GaN devices namely for power electronics, scintillators and detectors as well as High Electron Mobility Transistors (HEMT). Reduction of dislocation density considerably increases electron mobility in 2DEG. All presented results support our expectation that a suitably designed AlGaN back barrier can help to prevent this phenomenon.
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MOVPE GaN/AlGaN HEMT nano-structures
Hulicius, Eduard ; Kuldová, Karla ; Hospodková, Alice ; Pangrác, Jiří ; Dominec, Filip ; Humlíček, J. ; Pelant, Ivan ; Cibulka, Ondřej ; Herynková, Kateřina
GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts do, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications. HEMT structures were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished Si substrates. Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and micro-Raman spectroscopy.\n
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Low Noise amplifier for 8,4 GHz
Svoboda, Libor ; Vágner, Petr (referee) ; Kasal, Miroslav (advisor)
This project deals with methods of design and realization of low noise microwave amplifier for X-band. The first part describes this issue at a theoretical level. Thus it contains a detailed analysis of microstrip line and its circuit components. It is followed by some specifics of microstrip filters and with mention of microwave heterojunction transistors. The last chapter of the theoretical part describes design of small-signal amplifier with focus on low noise figure. The second part, practical, shows a concrete procedure of two-stage LNA design with HEMTs, using CAD tool Ansoft Designer. This section, as well as the bachelor’s thesis, is finished with realization of amplifier and analysis of its properties.
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